JANTXV4N22 Datasheet, Micropac Industries

datasheet Download (Size : 94.23KB)

JANTXV4N22 Features and benefits

*
*
*
*
* Overall current gain...1.5 typical (4N24) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage tra.

JANTXV4N22 Application

*
*
*
*
* Eliminate ground loops Level shifting Line receiver Switching power supplies Motor contro.

JANTXV4N22 Description

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JAN.

Image gallery